MC14012B: Dual 4-Input NAND Gates
These Dual 4 Input NAND Gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.
特性- Supply Voltage Range = 3.0 Vdc to 18 Vdc
- All Outputs Buffered
- Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.
- Double Diode Protection on All Inputs
- Pin-for-Pin Replacements for Corresponding CD4000 Series B Suffix Devices
- Pb-Free Packages are Available*
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封装
仿真模型 (2)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| SOIC-14 NB | 751A-03 (34.3kB) | L |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MC14012BDG | Active | Pb-free
Halide free | SOIC-14 | 751A-03 | 1 | Tube | 55 | $0.1913 |
| MC14012BDR2G | Active | Pb-free
Halide free | SOIC-14 | 751A-03 | 1 | Tape and Reel | 2500 | $0.1913 |
| NLV14012BDG | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOIC-14 | 751A-03 | 1 | Tube | 55 | $0.1907 |
| NLV14012BDR2G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOIC-14 | 751A-03 | 1 | Tape and Reel | 2500 | $0.1907 |
订购产品技术参数
| Product | Type | Channels | VCC Min (V) | VCC Max (V) | tpd Max (ns) | IO Max (mA) |
|---|
| MC14012BDG | NAND | 2 | 3 | 18 | 130 | 2.25 |
| MC14012BDR2G | NAND | 2 | 3 | 18 | 130 | 2.25 |
| NLV14012BDG | NAND | 2 | 3 | 18 | 130 | 2.25 |
| NLV14012BDR2G | NAND | 2 | 3 | 18 | 130 | 2.25 |
