MJL21196: Bipolar Transistor, NPN, 250 V, 16 A

The MJL21195 and MJL21196 Bipolar Complementary Audio Power Transistors utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

特性
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 2.25 A, 80 V, 1 Second
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJL21196.LIB (0.0kB)0
Saber ModelMJL21196.SIN (1.0kB)0
Spice2 ModelMJL21196.SP2 (0.0kB)0
Spice3 ModelMJL21196.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-3PBL (TO-264)340G-02 (30.7kB)J
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Silicon Power TransistorsMJL21195/D (129.0kB)5
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJL21196GActivePb-freeTO-3PBL/ TO-264-3340G-02NATube25$2.2666
MJL21196Last ShipmentsTO-3PBL/ TO-264-3340G-02NATube25
订购产品技术参数
ProductPolarityIC Continuous (A)VCEO(sus) Min (V)hFE MinhFE MaxPTM Max (W)fT Min (MHz)
MJL21196GNPN16250251002004
Silicon Power Transistors (129.0kB) MJL21196
PSpice Model MJL21196
Saber Model MJL21196
Spice2 Model MJL21196
Spice3 Model MJL21196
TO-3PBL (TO-264) MJL4302A