MJW21194: Bipolar Transistor, NPN, 250 V, 16 A

The MJW21194 Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.

特性
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 20 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 2.25 A, 80 V, 1 Second
封装
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Silicon Power TransistorsMJW21193/D (119.0kB)5
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-247340L-02 (57.4kB)F
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJW21194GActivePb-freeTO-247-3340L-02NATube30$2.0666
MJW21194Last ShipmentsTO-247-3340L-02NATube30
订购产品技术参数
ProductPolarityIC Continuous (A)VCEO(sus) Min (V)hFE MinhFE MaxPTM Max (W)fT Min (MHz)
MJW21194GNPN1625020702004
Silicon Power Transistors (119.0kB) MJW21194
TO-247 NGTG50N60FWG