NSR02F30MX: 200 mA, 30 V, x3DFN 0201 Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a space saving x3DFN 0201 package ideal for space constraint applications.
特性- Low Forward Voltage Drop
- High Switching Speed
- Low Reverse Current
- These devices are Pb-free, Halogen free/BFR free and are RoHS compliant
| 优势- Reduces Power Dissipation
- Better Performance
- Reduces Power Dissipation
|
应用- LCD and Keypad Backlighting
- Camera Photo Flash
- Buck and Boost DC-DC Converters
- Reverse Voltage and Current Protection
| 终端产品- Reverse Voltage and Current Protection
- Mobile Handsets
- Notebooks, PCs & PDA
- GPS, MP3 Players
|
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NSR02F30MXT5G | Active | Pb-free
Halide free | X3DFN-2 | 152AF | 1 | Tape and Reel | 10000 | $0.0467 |
订购产品技术参数
| Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (µA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
|---|
| NSR02F30MXT5G | Single | 30 | 0.6 | 50 | 0.2 | 2 | 3 | 8 |
