NSS30101LT1G: Low VCE(sat) Transistor, NPN, 30 V, 2.0 A

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

特性
  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
应用
  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
培训教材 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT)TND404/D (10341.0kB)0Aug, 2010
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 PackageNSS30101LT1G/D (128.0kB)1
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOT-23318-08 (62.5kB)AP
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNSS30101LT1G.LIB (0.0kB)0
Saber ModelNSS30101LT1G.SIN (1.0kB)0
Spice2 ModelNSS30101LT1G.SP2 (0.0kB)0
Spice3 ModelNSS30101LT1G.SP3 (0.0kB)0
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NSS30101LT1GActiveAEC Qualified Pb-free Halide freeLow VCE(sat) Transistor, NPN, 30 V, 2.0 ASOT-23-3318-081Tape and Reel3000$0.1333
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
NSS30101LT1GNPN1300.23009001000.71
Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 Package (91kB) NSS30101L
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT) NSS60601MZ4
PSpice Model NSS30101L
Saber Model NSS30101L
Spice2 Model NSS30101L
Spice3 Model NSS30101L
SOT-23 CM1214A