NTD5865N: Power MOSFET 60V 43A 18 mOhm Single N-Channel DPAK
Power MOSFET Single N Channel, 60V, 43A, DPAK/IPAK
特性- Low RDS(on)
- High current capability
- 100% avalanche tested
- Pb-free, Halide-free
| 优势- Minimal conduction losses
- Robust load performance
- Voltage overstress safeguard
- RoHS compliance
|
应用- LED Backlighting
DC-DC Converter
Motor Driver
UPS Inverter
|
数据表 (1)
封装图纸 (2)
产品订购型号
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
---|
NTD5865N-1G | Last Shipments | Pb-free
Halide free | Power MOSFET 60V 43A 18 mOhm Single N-Channel DPAK | IPAK-4 | 369D | NA | Tube | 75 | |
NTD5865NT4G | Active | Pb-free
Halide free | Power MOSFET 60V 43A 18 mOhm Single N-Channel DPAK | DPAK-3 | 369AA | 1 | Tape and Reel | 2500 | $0.3631 |
订购产品技术参数
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
---|
NTD5865NT4G | N-Channel | Single | 60 | 20 | 4 | 38 | 52 | | | 14 | | 23 | 7.7 | 20 | 1261 | 136 | 85 |