HMC-ABH241 Medium Power Amplifier Chip, 50 - 66 GHz
The HMC-ABH241 is a four stage GaAs HEMT MMIC Medium Power Amplifier which operates between 50 and 66 GHz. The HMC-ABH241 provides 24 dB of gain, and an output power of +17 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-ABH241 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
技术特性
- Output IP3: +25 dBm
- P1dB: +17 dBm
- Gain: 24 dB
- Supply Voltage: +5V
- 50 Ohm Matched Input/Output
- Die Size: 3.2 x 1.42 x 0.1 mm
应用领域 APPLICATION
- Short Haul / High Capacity Links
- Wireless LAN Bridges
- Military & Space
订购信息 Ordering Information
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 50 - 66 |
Medium Power Amplifier |
24 |
33 |
- |
17 |
+5V @ 220mA |
Chip |
功能框图 Functional Block Diagram
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