HMC-ALH216 Low Noise Amplifier Chip, 14 - 27 GHz

The HMC-ALH216 is a GaAs MMIC HEMT Wideband Low Noise Amplifier die which operates between 14 and 27 GHz. The amplifier provides 18 dB of gain, 2.5 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage. The HMC-ALH216 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.

技术特性
  • Noise Figure: 2.5 dB @ 20 GHz
  • Gain: 18 dB
  • P1dB Output Power: +14 dBm
  • Supply Voltage: +4V @ 90 mA
  • Die Size: 2.25 x 1.58 x 0.1 mm
订购信息 Ordering Information
  • HMC-ALH216
应用领域 APPLICATION
  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • Military & Space
  • Test Instrumentation
技术指标
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
14 - 27 Low Noise 18 - 2.5 14 +4V @ 90mA Chip
功能框图 Functional Block Diagram

HMC-ALH216 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
HMC-ALH216 数据资料DataSheet下载:pdf Rev.V2 2 页