HMC-ALH382 Low Noise Amplifier Chip, 57 - 65 GHz
The HMC-ALH382 is a high dynamic range, four stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 57 and 65 GHz. The HMC-ALH382 features 21 dB of small signal gain, 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
技术特性
- Noise Figure: 3.8 dB
- P1dB: +12 dBm
- Gain: 21 dB
- Supply Voltage: +2.5V
- 50 Ohm Matched Input/Output
- Die Size: 1.55 x 0.73 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Short Haul / High Capacity Links
- Wireless LANs
- Military & Space
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 57 - 65 |
Low Noise |
21 |
- |
4 |
12 |
+2.5V @ 64mA |
Chip |
功能框图 Functional Block Diagram
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