HMC327MS8G MMIC Power Amplifier SMT, 3 - 4 GHz
The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.
技术特性
- Gain: 21 dB
- Saturated Power: +30 dBm
- 45% PAE
- Supply Voltage: +5V
- Power Down Capability
- Low External Part Count
应用领域 APPLICATION
订购信息 Ordering Information
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 3 - 4 |
Power Amplifier, 1/2 Watt |
21 |
40 |
5 |
27 |
+5V @ 250mA |
MS8G |
功能框图 Functional Block Diagram
|
