HMC373LP3 Low Noise Amplifier SMT w/Bypass, 0.7

HMC373LP3 Low Noise Amplifier SMT w/Bypass, 0.7 - 1.0 GHz

The HMC373LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz and provides 0.9 dB noise figure, 14 dB of gain and +35 dBm IP3 from a single supply of +5V @ 90 mA. Input and output return losses are 28 and 12 dB respectively with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. By presenting an open or short circuit to a single control line, the LNA can be switched into a low 2 dB loss bypass mode reducing the current consumption to 10 μA. For applications which require improved noise figure, please see the HMC668LP3(E).

技术特性

Noise Figure: 0.9 dB
Output IP3: +35 dBm
Gain: 14 dB
Low Loss LNA Bypass Path
Single Supply: +5V @ 90 mA
50 Ohm Matched Output

订购信息 Ordering Information

HMC373LP3

应用领域 APPLICATION

GSM, GPRS & EDGE
CDMA & W-CDMA
Private Land Mobile Radio

技术指标

Freq. (GHz)	Function	Gain (dB)	OIP3 (dBm)	NF (dB)	P1dB (dBm)	Bias Supply	Package
0.7 - 1.0	Low Noise	14	35	0.9	21	+5V @ 90mA	LP3

功能框图 Functional Block Diagram

应用技术支持与电子电路设计开发资源下载	版本信息	大小
HMC373LP3 数据资料DataSheet下载:pdf	Rev.V2	2 页