HMC395 InGaP HBT Gain Block Amplifier Chip, DC - 4 GHz
The HMC395(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifier which operates between 3 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.
技术特性
- Gain: 15 dB
- P1dB Output Power: +16 dBm
- Stable Gain Over Temperature
- 50 Ohm I/O’s
- Small Size: 0.38 x 0.58 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Microwave & VSAT Radios
- Test Equipment
- Military EW, ECM, C³I
- Space Telecom
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| DC - 4 |
HBT Gain Block |
15 |
28 |
4.5 |
15 |
+5V @ 54mA |
Chip |
功能框图 Functional Block Diagram
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