HMC408LP3 1 Watt Power Amplifier SMT, 5.1 - 5.9 GHz
The HMC408LP3(E) is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance.
技术特性
- Gain: 20 dB
- Saturated Power:
+32.5 dBm @ 27% PAE
- Single Supply Voltage: +5V
- Power Down Capability
- 3x3 mm Leadless SMT Package
应用领域 APPLICATION
- 802.11a & HiperLAN WLAN
- UNII & Pt-to-Pt / Multi-Point Radios
- Access Point Radios
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 5.1 - 5.9 |
Power Amplifier, 1 Watt |
20 |
43 |
6 |
30 |
+5V @ 750mA |
LP3 |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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