HMC413QS16G Power Amplifier SMT, 1.6 - 2.2 GHz
The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.
技术特性
- Gain: 23 dB
- Saturated Power: +29.5 dBm 42% PAE
- Supply Voltage: +2.75V to +5V
- Power Down Capability
- Low External Part Count
- Included in the
HMC-DK002 Designer’s Kit
应用领域 APPLICATION
- Cellular / PCS / 3G
- Portable & Infrastructure
- Wireless Local Loop
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 1.6 - 2.2 |
Medium Power Amplifier |
22 |
40 |
5.5 |
27 |
+3.6V @ 270mA |
QS16G |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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