HMC414MS8G InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz

The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.

技术特性
  • Gain: 20 dB
  • Saturated Power: +30 dBm
  • 32% PAE
  • Supply Voltage: +2.75V to +5V
  • Power Down Capability
  • Low External Part Count
应用领域 APPLICATION
  • BLUETOOTH
  • MMDS
技术指标
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
2.2 - 2.8 Power Amplifier, 1/2 Watt 20 39 7 27 +5V @ 300mA MS8G
订购信息 Ordering Information
  • HMC414MS8G
功能框图 Functional Block Diagram

HMC414MS8G 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
HMC414MS8G 数据资料DataSheet下载:pdf Rev.V2 2 页