HMC452QS16G 1 Watt Power Amplifier SMT, 0.4 - 2.2 GHz
The HMC452QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC452QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.
技术特性
- Output IP3: +48 dBm
- 22.5 dB Gain @ 400 MHz
- 9 dB Gain @ 2100 MHz
- 53% PAE @ +31 dBm Pout
- +24 dBm CDMA2000
Channel Power@ -45 dBc ACP
- Single +5V Supply
- Integrated Power Control (VPD)
- QSOP16G SMT Package: 29.4 mm²
订购信息 Ordering Information
应用领域 APPLICATION
- GSM, GPRS & EDGE
- CDMA & W-CDMA
- CATV/Cable Modem
- Fixed Wireless & WLL
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 0.45 - 2.2 |
Power Amplifier, 1 Watt |
22.5 |
48 |
7 |
30 |
+5V @ 485mA |
QS16G |
功能框图 Functional Block Diagram
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