HMC464 Wideband Power Amplifier Chip, 2 - 20 GHz
The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver amplifier applications. The HMC464 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
技术特性
- P1dB Output Power: +26 dBm
- Gain: 16 dB
- Output IP3: +30 dBm
- Supply Voltage: +8V @ 290 mA
- 50 Ohm Matched Input/Output
- Die Size: 3.12 x 1.63 x 0.1 mm
应用领域 APPLICATION
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military & Space
- Test Instrumentation
- Fiber Optics
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 2 - 20 |
Wideband Power Amplifier |
16 |
30 |
4 |
26 |
+8V @ 290mA |
Chip |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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