HMC559 Wideband Power Amplifier Chip, DC - 20 GHz
The HMC559 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 20 GHz. The amplifier provides 14 dB of gain, +36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10V supply. Gain flatness is slightly positive from 4 to 20 GHz making the HMC559 ideal for EW, ECM and radar driver amplifier applications. The HMC559 amplifier I/O’s are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).
技术特性
- P1dB Output Power: +28 dBm
- Gain: 14 dB
- Output IP3: +36 dBm
- Supply Voltage: +10V @ 400 mA
- 50 Ohm Matched Input/Output
- Die Size: 3.12 x 1.50 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military & Space
- Test Instrumentation
- Fiber Optics
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| DC - 20 |
Wideband Power Amplifier |
14 |
36 |
4 |
28 |
+10V @ 400mA |
Chip |
功能框图 Functional Block Diagram
|
