HMC562 Wideband Driver Amplifier Chip, 2 - 35 GHz
The HMC562 is a GaAs MMIC PHEMT Distributed Driver Amplifier die which operates between 2 and 35 GHz. The amplifier provides 12.5 dB of gain, +27 dBm output IP3 and +12 dBm of output power at 1 dB gain compression while requiring 80 mA from a +8V supply. The HMC562 is ideal for EW, ECM and radar driver amplifier applications. The HMC562 amplifier I/O’s are DC blocked and internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).
技术特性
- P1dB Output Power: +12 dBm
- Gain: 12.5 dB
- Output IP3: +19 dBm
- Supply Voltage: +8V @ 80 mA
- 50 Ohm Matched Input/Output
- Die Size: 3.12 x 1.42 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Military & Space
- Test Instrumentation
- Fiber Optics
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 2 - 35 |
Wideband Driver |
12.5 |
27 |
3 |
18 |
+8V @ 80mA |
Chip |
功能框图 Functional Block Diagram
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