HMC582LP5 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 11.1 - 12.4 GHz
The HMC582LP5 & HMC582LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC582LP5 & HMC582LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
技术特性
- Triple Output: Fo = 11.1 - 12.4 GHz
- Fo/2 = 5.55 - 6.2 GHz
- Fo/4 = 2.78 - 3.1 GHz
- Pout: +9 dBm
- Phase Noise: -110 dBc/Hz @100 kHz Typ.
- No External Resonator Needed
- 32 Lead 5x5mm SMT Package: 25mm²
订购信息 Ordering Information
应用领域 APPLICATION
- Point to Point/Multipoint Radio
- Test Equipment & Industrial Controls
- SATCOM
- Military End-Use
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技术指标
| Fo Freq. (GHz) |
Fo/2 Freq. (GHz) |
Function |
Fo Output Power (dBm) |
10 kHz SSB Phase Noise (dBc/Hz) |
100 kHz SSB Phase Noise (dBc/Hz) |
Package |
| 11.17 - 12.02 |
5.585 - 6.01 |
VCO with Fo/2 & ÷4 |
7 |
-87 |
-110 |
LP5 |
功能框图 Functional Block Diagram
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