HMC606 Wideband Low Phase Noise Amplifier Chip, 2 - 18 GHz
The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise perfor-mance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output powe at 1 dB gain compression which requiring 64 mA from a +5V supply. The HMC606 amplifier I/O's are internally mateched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mil).
技术特性
- Ultra Low Phase Noise:
-160 dBc/Hz @ 10 kHz
- P1dB Output Power: +15 dBm
- Gain: 14 dB
- Output IP3: +27 dBm
- Supply Voltage: +5V @64mA
- 50 Ohm Matched Input/Output
- Die Size: 2.11 x 1.32 x 0.10 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Radar, EW & ECM
- Microwave Radio
- Test Instrumentation
- Military & Space
- Fiber Optic Systems
|
技术指标
| Freq. (GHz) |
Function |
Gain / NF (dB) |
OIP3 (dBm) |
10 kHz SSB Phase Noise (dBc/Hz) |
P1dB / Psat (dBm) |
Bias Supply |
Package |
| 2 - 18 |
Low Phase Noise |
14 / 4.5 |
27 |
-160 |
15 / 18 |
+5V @ 64mA |
Chip |
功能框图 Functional Block Diagram
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