HMC635 Driver Amplifier Chip, 18 - 40 GHz
The HMC635 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of providing up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length.
技术特性
- Gain: 19.5 dB
- P1dB: +23 dBm
- Output IP3: +29 dBm
- Saturated Power:
+24 dBm @ 15% PAE
- Supply Voltage: +5V @ 280 mA
- 50 Ohm Matched Input/Output<
- Die Size: 1.95 x 0.84 x 0.10 mm
应用领域 APPLICATION
- Point-to-Point Radios
- Point-to-Multi-Point Radios & VSAT
- LO Driver for Mixers
- Military & Space
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 18 - 40 |
Wideband Driver |
19.5 |
29 |
8 |
23 |
+5V @ 280mA |
Chip |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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