HMC637 1 Watt Power Amplifier Chip, DC - 6 GHz
The HMC637 is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz. The amplifier provides 14 dB of gain, +41 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at 0.5 dB from DC to 6 GHz making the HMC637 ideal for EW, ECM, Radar and test equipment applications. The HMC637 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
技术特性
- P1dB Output Power: +29 dBm
- Gain: 14 dB
- Output IP3: +41 dBm
- Bias Supplies: +12V, +6V, -1V
- 50 Ohm Matched Input/Output
- Die Size: 2.98 x 2.48 x 0.1 mm
应用领域 APPLICATION
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military & Space
- Test Instrumentation
- Fiber Optics
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| DC - 6 |
Wideband Power Amplifier |
14 |
41 |
5 |
29 |
+12V @ 400mA |
Chip |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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