HMC637LP5 1W Power Amplifier SMT, DC - 6 GHz
The HMC637LP5(E) is a GaAs MMIC MESFET Distributed Power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +40 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at 0.75 dB from DC - 6 GHz making the HMC637LP5(E) ideal for EW, ECM, Radar and test equipment applications. The HMC637LP5(E) amplifier I/Os are internally matched to 50 ohms and the 5x5 mm QFN package is compatible with high volume SMT assembly equipment.
技术特性
- P1dB Output Power: +29 dBm
- Gain: 13 dB
- Output IP3: +40 dBm
- 50 Ohm Matched Input/Output
- 32 Lead 5x5mm SMT Package: 25mm²
订购信息 Ordering Information
应用领域 APPLICATION
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military & Space
- Test Instrumentation
- Fiber Optics
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| DC - 6 |
Wideband Power Amplifier |
13 |
40 |
5 |
29 |
+12V @ 400mA |
LP5 |
功能框图 Functional Block Diagram
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