HMC659 Power Amplifier Chip, DC - 15 GHz
The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19.1 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
技术特性
- P1dB Output Power: +26.5 dBm
- Gain: 19.1 dB
- Output IP3: +35 dBm
- Supply Voltage: +8V @ 300 mA
- 50 Ohm Matched Input/Output
- Die Size: 3.115 x 1.630 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military & Space
- Test Instrumentation
- Fiber Optics
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| DC - 15 |
Wideband Power Amplifier |
19 |
35 |
2 |
26.5 |
+8V @ 300mA |
Chip |
功能框图 Functional Block Diagram
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