HMC756 1 Watt Power Amplifier Chip, 16 - 24 GHz
The HMC756 is a three stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).
技术特性
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Saturated Output Power:
+33 dBm @ 28% PAE
-
High Output IP3: +41 dBm
-
High Gain: 23 dB
-
DC Supply: +7V @ 790 mA
-
DC Blocked RF I/Os
-
No External Matching Required
-
Die Size: 2.4 x 1.6 x 0.1 mm
应用领域 APPLICATION
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- VSAT
- Military & Space
订购信息 Ordering Information
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 16 - 24 |
Power Amplifier, 1 Watt |
23 |
41 |
- |
31 |
+7V @ 790mA |
Chip |
功能框图 Functional Block Diagram
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