HMC816LP4E Amplifier, 230 - 660 MHz
The HMC816LP4E is a GaAs PHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 230 and 660 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 22 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC816LP4E shares the same package and pinout with the HMC817LP4E and HMC818LP4E LNAs. The HMC816LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application.
技术特性
- Noise Figure: 0.5 dB
- Gain: 22 dB
- Output IP3: +37 dBm
- Single Supply: +3V to +5V
- 50 Ohm Matched Input/Output
- 24 Lead 4x4mm QFN Package: 16mm²
订购信息 Ordering Information
应用领域 APPLICATION
- Cellular/3G & LTE/WiMAX/4G
- BTS & Infrastructure
- Repeaters and Femtocells
- Public Safety Radio
- Multi-Channel Applications
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 0.23 - 0.66 |
Low Noise, Dual Channel |
22 |
37 |
0.5 |
19 |
+5V @ 97mA |
LP4 |
功能框图 Functional Block Diagram
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