HMC906 2 Watt Power Amplifier Chip, 27.3 -33.5 GHz
The HMC906 is a four stage GaAs pHEMT MMIC 2 Watt Power Amplifier which operates between 27.3 and 33.5 GHz. The HMC906 provides 23 dB of gain, and +34 dBm of saturated output power and 22% PAE from a +6V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).
技术特性
- Saturated Output Power:
+34 dBm @ 22% PAE
- High Gain: 23 dB
- High Output IP3: +43 dBm
- Supply Voltage: +6 V @ 1200 mA
- No External Matching Required
- Die Size: 3.18 x 2.68 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- VSAT
- Military & Space
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 27.3 - 33.5 |
Power Amplifier, 2 Watt |
23 |
43 |
- |
33 |
+6V @ 1200mA |
Chip |
功能框图 Functional Block Diagram
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