HMC907 1/2 Watt Power Amplifier Chip, 0.2 - 22 GHz
The HMC907 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, 38 dBm output IP3 and +27 dBm of output power at 1 dB gain compression while requiring only 350mA from a +10V supply. Gain flatness is excellent at ±0.6 dB from DC to 12 GHz making the HMC907 ideal for EW, ECM, Radar and test equipment applications. The HMC907 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length.
技术特性
- High P1dB Output Power: +27 dBm
- High Gain: 14 dB
- High Output IP3: +38 dBm
- Supply Voltage: +10 V @ 350 mA
- 50 Ohm matched Input/Output
- Die Size: 2.91 x 1.33 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Test Instrumentation
- Microwave Radio & VSAT
- Military & Space
- Telecom Infrastructure
- Fiber Optics
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 0.2 - 22 |
Wideband Power Amplifier |
14 |
38 |
3 |
27 |
+10V @ 350mA |
Chip |
功能框图 Functional Block Diagram
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