HMC907LP5E 1/2 Watt Power Amplifier SMT, 0.2 - 22 GHz
The HMC907LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 12 dB of gain, +36 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at ±0.7 dB from 0.2 to 22 GHz making the HMC907LP5E ideal for EW, ECM, Radar and test equipment applications. The HMC907LP5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs) and is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
技术特性
- High P1dB Output Power: +26 dBm
- High Gain: 12 dB
- High Output IP3: +36 dBm
- Supply Voltage: +10 V @ 350 mA
- 50 Ohm matched Input/Output
- 32 Lead 5x5 mm SMT Package: 25 mm²
订购信息 Ordering Information
应用领域 APPLICATION
- Test Instrumentation
- Microwave Radio & VSAT
- Military & Space
- Telecom Infrastructure
- Fiber Optics
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 0.2 - 22 |
Wideband Power Amplifier |
12 |
36 |
3.5 |
26 |
+10V @ 350mA |
LP5 |
功能框图 Functional Block Diagram
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