HMC998 2 Watt Power Amplifier Chip, 0.1 - 22 GHz
The HMC998 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 12 dB of gain, 41 dBm output IP3 and +31 dBm of output power at 1 dB gain compression while requiring 500 mA from a +15V supply. This versatile PA exhibits a positive gain slope from 1 to 18 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC998 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
技术特性
- High P1dB Output Power: +31 dBm
- High Psat Output Power: +33 dBm
- High Gain: 12 dB
- High Output IP 3: +41 dBm
- Supply Voltage:
Vdd = +10V to +15 V @ 500 mA
- 50 Ohm Matched Input/Output
- Die Size: 2.99 x 1.84 x 0.1 mm
应用领域 APPLICATION
- Test Instrumentation
- Microwave Radio & VSAT
- Military & Space
- Telecom Infrastructure
- Fiber Optics
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 0.1 - 22 |
2 Watt Power Amplifier |
12 |
41 |
5 |
31 |
+15V @
500 mA |
Chip |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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