HMC998LP5E GaAs pHEMT MMIC, 2 Watt Power Amplifier, 0.1 - 20 GHz

The HMC998LP5E is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 12 dB of gain, 41 dBm output IP3 and +31 dBm of output power at 1 dB gain compression while requiring 500 mA from a +15V supply. This versatile PA exhibits a positive gain slope from 1 to 18 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC998LP5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

技术特性
  • P1dB Output Power: +31 dBm
  • Psat Output Power: +33 dBm
  • High Gain: 11 dB
  • Output IP 3: +41 dBm
  • Supply Voltage: Vdd = +15V @ 500 mA
  • 50 Ohm Matched Input / Output
订购信息 Ordering Information
  • HMC998LP5E
应用领域 APPLICATION
  • Test Instumentation
  • Microwave Radio & VSAT
  • Military & Space
  • Telecom Infrastructure
  • Fiber Optics

技术指标
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
0.1 - 20 Power Amplifier, 2 Watt 11 41 - 31 +15V @ 500mA LP5
功能框图 Functional Block Diagram

HMC998LP5E 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
HMC998LP5E 数据资料DataSheet下载:pdf Rev.V2 2 页