3DG51 型晶体管
- 结构名称：NPN硅超高频小功率低噪声三极管。
- 等级标记：Ⅱ类
- 主要用途：接收机、无线电设备作超高频低噪声放大、混频及振荡。
- 外 形 图：B-2A型
3DG51 型晶体管参数
| 序号 | 参数 | 单位 | 测试条件 | 规 范 值 | ||||||
| 3DG51A | 3DG51B | 3DG51C | 3DG51D | 3DG51E | ||||||
| 1 | PCM | mW | 100 | |||||||
| 2 | IC | mA | 15 | |||||||
| 3 | TjM | ℃ | 175 | |||||||
| 4 | ICBO | μA | VCB=6V | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ||
| 5 | ICEO | μA | VCE=6V | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ||
| 6 | IEBO | μA | VEB=1.5V | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ||
| 7 | V(BR)CBO | V | ICB=50μA | ≥15 | ≥15 | ≥15 | ≥15 | ≥15 | ||
| 8 | V(BR)CEO | V | ICE=50μA | ≥10 | ≥10 | ≥10 | ≥10 | ≥10 | ||
| 9 | V(BR)EBO | V | IEB=50μA | ≥4 | ≥4 | ≥4 | ≥4 | ≥4 | ||
| 10 | VBE(sat) | V | IC=10mA，IB=1mA | ≤1 | ≤1 | ≤1 | ≤1 | ≤1 | ||
| 11 | VCE(sat) | V | IC=10mA，IB=1mA | ≤0.35 | ≤0.35 | ≤0.35 | ≤0.35 | ≤0.35 | ||
| 12 | hFE | VCE=6V，IC=2mA | 40~270 | 40~270 | 40~270 | 40~270 | 40~270 | |||
| 13 | fT | MHz | VCE=6V，IC=2mA，f=400MHz | 800~1200 | 1000~1500 | 1000~1500 | ≥1000 | ≥1500 | ||
| 14 | NF | db | VCE=6V，IC=1mA，f=100MHz | ≤2.5 | ||||||
| 15 | NF | db | VCE=6V，IC=1mA，f=600MHz | ≤3 | ≤2.5 | |||||
NPN型金属封装硅高频小功率晶体管hFE分档表
| hFE | 40~55 | 55~80 | 80~120 | 120~180 | 180~270 |
| 色标 | 黄 | 绿 | 蓝 | 紫 | 灰 |
3DG51 型晶体管封装尺寸图
