CF001-03-BD-000V GaAs MESFET Transistor
Mimix CF001-03 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon Nitride passivation. The CF001-03 is suitable for narrow and wide band low noise and high gain amplifiers up to 40 GHz. The CF001-03 is available in chip form and is suitable for airborne, shipboard and ground-based equipment. The devices are 100% DC tested and every wafer is qualified based on sample RF and reliability testing. Screening includes MIL-STD-750 Class B, Class S and commercial screening. These devices are also available in packaged form. Please consult the CFS0103-SB, CFB0103-B, CFA0103-A datasheets or contact the factory for further information.
技术特性 Features
- High Gain: Usable to 44 GHz
- Low Noise Figure 0.8 dB @ 12 GHzt
- Wafer Qualification Procedure
- Customer Wafer Selection Available
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订购信息 Ordering Information
- CF001-03-000X Where “X” is RoHS compliant die packed in “V” - vacuum release gel packs or W” - waffle trays
- CF001-03-BD-000V
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