This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM Technology Solutions patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly.
技术特性 Features
订购信息 Ordering Information
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功能框图 Functional Block Diagram应用领域ApplicationsThese surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W), shunt, or-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts. |
应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
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MA4SPS402 数据资料DataSheet下载.PDF | Rev.V2 | 2 页 |
MA4SPS402:S 参数 | 41K |