The MA4SW424B-1 is a SP4T switch with an integrated bias network which utilizes M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form and/or shunt diodes or vias by imbedding them in a low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices exceptional low loss and high isolation performance with exceptional repeatability through lower millimeter frequencies. Five, 4.5 X 5.5 mil, RF bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding using electrically conductive silver epoxy. Each RF bond pad has an adjacent tuning pad. The user can use bias and add the appropriate wire or ribbon (inductance) to optimize the RF match and performance for the particular frequency of interest.
技术特性 Features
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应用领域 ApplicationsThe MA4SW424B-1 SP4T, switch is designed for 24 GHz automotive switching applications. Insertion loss is achieved with +12 mA @ +4 V and isolation is achieved with 0V D.C. bias. The RF bias network is integrated into the HMIC switch for ease of use and space considerations. 订购信息 Ordering Information
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| MA4SW424B-1 数据资料DataSheet下载：PDF | Rev.V2 | 2 页 |
