MADP-042XX5-13060 SURMOUNTTM PIN Diodes: RoHS
This device is a silicon, glass PIN diode surmount chip fabricated with M/A-COM Tech’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical topology provides for exceptional heat transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly.
技术特性 Features
应用领域ApplicationsThese packageless devices are suitable for moderate incident power applications, ≤ 10W/C.W. or where the peak power is ≤ 50W, pulse width is ≤ 1μS, and duty cycle is ≤ 0.01%. Their low parasitic inductance, 0.4 nH, and excellent RC constant, make these devices a superior choice for higher frequency switch elements when compared to their plastic package counterparts. |
功能框图 Functional Block Diagram
订购信息Ordering Information
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
|---|---|---|
| MADP-042XX5-13060 数据资料DataSheet下载.pdf | Rev.V2 | 2 页 |
| MADP-042305:S 参数 | 42K | |
| MADP-042405:S 参数 | 10K | |
| MADP-042505:S 参数 | 28K |
