MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty

The MAGX-001214-250L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.

技术特性 Features

GaN depletion mode HEMT microwave transistor
Internally matched
Common source configuration
Broadband Class AB operation
RoHS Compliant
+50V Typical Operation
MTTF of 114 years (Channel Temperature < 200°C)

订购信息 Ordering Information

MAGX-001214-250L00

应用领域Applications

L-Band pulsed radar

MAGX-001214-250L00 产品实物图

应用技术支持与电子电路设计开发资源下载	版本信息	大小
MAGX-001214-250L00数据资料DataSheet下载：PDF	Rev.V2	3页