MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty

The MAGX-002731-180L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-180L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.

技术特性 Features

GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
MTTF of 114 years (Channel Temperature < 200°C)
EAR99 Export Classification

订购信息 Ordering Information

MAGX-002731-180L00 180W GaN Power Transistor
MAGX-002731-SB3PPR Evaluation Fixture

应用领域Applications

Civilian and Military Pulsed Radar

MAGX-002731-180L00 产品实物图

应用技术支持与电子电路设计开发资源下载	版本信息	大小
MAGX-002731-180L00数据资料DataSheet下载：PDF	Rev.V2	3页