Mimix Broadband’s 0.05-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 9.0 dB with a noise figure of 5.0 dB across the band. The device also includes 15.0 dB gain control and a +9.0 dBm P1dB compression point. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave and wideband military applications.
| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| XD1002-BD数据资料DataSheet下载：PDF | Rev.V2 | 2 页 |
| XD1002-BD:S 参数 | 8K |
