M/A-COM Tech’s 30 kHz - 40 GHz GaAs MMIC distributed amplifier has a gain of 15 dB with a 4.5 dB noise figure at 26 GHz. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave, military, wideband and instrumentation applications.
应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
XD1008-BD数据资料DataSheet下载:PDF | Rev.V2 | 2 页 |
XD1008-BD:S 参数 | 24K |