XL1000-BD Low Noise Amplifier 20.0-40.0 GHz
M/A-COM Tech’s three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
技术特性 Features
- Self Bias Architecture
- Small Size
- 3.0 or 5.0 V Operation
- 20.0 dB Small Signal Gain
- 2.0 dB Noise Figure
- +9.0 dBm P1dB Compression Point
- 100% On-Wafer RF, DC and Noise Figure Testing
- 100% Visual Inspection to MIL-STD-883 Method 2010
- RoHS* Compliant and 260°C Reflow Compatible
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订购信息 Ordering Information
- XL1000-BD-000V “V” - vacuum release gel paks
- XL1000-BD-EV1 evaluation module
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