MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W

The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 – 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Push-pull configuration
  • High output power
    Pout=160W (TYP.) @f=2.17GHz
  • High power gain
    GLP=12.0dB (TYP.) @f=2.17GHz
  • High power added efficiency
    P.A.E.=48% (TYP.) @f=2.17GHz
应用领域 APPLICATION
  • 2.1-2.2GHz band power amplifier for W-CDMA Base Station
订购信息 Ordering Information
  • MGFS52BN2122A
外观尺寸图 Outline Drawing

MGFS52BN2122A 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFS52BN2122A 数据资料DataSheet下载:PDF Rev.V2 2 页