RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp

The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.

技术特性 Features
  • Enhancement-Mode MOSFET Transistors
    (IDD@0 @ VDD=8.0V, VGG=0V)
  • Pout>3.0W @ VDD=8.0V, VGG=3.5V, Pin=50mW
  • IT<2.0A @ Pout=32dBm (Pin control), VDD=8.0V, Pin=50mW
  • Frequency Range: 952-954MHz
  • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
  • Module Size: 30 x 10 x 5.4 mm
订购信息 Ordering Information
  • RA03M9595M
  • RA03M9595M -101 Antistatic tray,50 modules/tray
功能框图 Functional Block Diagram

RA03M9595M 功能图框


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RA03M9595M 数据资料DataSheet下载:PDF Rev.V2 2 页