RA13H1317M RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO

The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

技术特性 Features

Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
Pout>13W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
Broadband Frequency Range: 135-175 MHz
Low-Power Control Current IGG=1mA (typ) at VGG=5V
Module Size: 66 x 21 x 9.88 mm
Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power

订购信息 Ordering Information

RA13H1317M
RA13H1317M-101 Antistatic tray,10 modules/tray

功能框图 Functional Block Diagram

应用技术支持与电子电路设计开发资源下载	版本信息	大小
RA13H1317M 数据资料DataSheet下载：PDF	Rev.V2	2 页