RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection.
技术特性 Features
应用领域 APPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 订购信息 Ordering Information
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外观尺寸图 Outline Drawing
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| RD01MUS2B 数据资料DataSheet下载：PDF | Rev.V2 | 2 页 |
