RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
技术特性 Features
应用领域 APPLICATIONFor output stage of high power amplifiers In VHF/UHF band mobile radio sets. 订购信息 Ordering Information
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外观尺寸图 Outline Drawing |
应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
RD02MUS1B 数据资料DataSheet下载:PDF | Rev.V2 | 2 页 |