FPD1050 0.75W Power pHEMT
The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) featuring a 0.25μmx1050μm Schottky barrier gate defined by highresolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD1050 is also available in the low-cost plastic SOT89 package.
技术特性 Features
- 28.5dBm Linear Output Power at 12GHz
- 11dB Power Gain at 12GHz
- 14dB Max Stable Gain at 12GHz
- 41dBm OIP3
- 45% Power-Added Efficiency
应用领域 Applications
- Narrowband and Broadband
High-Performance Amplifiers
- SATCOM Uplink Transmitters
- PCS/Cellular Low-Voltage
High-Efficiency Output Amplifiers
- Medium-Haul Digital Radio
Transmitters
|
技术指标
| Frequency Range (Min) (MHz): |
1000 |
| Frequency Range (Max) (MHz): |
16000 |
| Gain (dB): |
14 |
| OP1dB (dBm): |
28 |
| OIP3 (dBm): |
39 |
| VSUPPLY (V): |
8 |
| ISUPPLY (mA): |
162.5 |
| Package: |
Die |
订购信息 Ordering Information
- Standard Order Quantity (waffle-pack) FPD1050-000
- Small Quantity (25) FPD1050-000SQ
- Small Quantity (3) FPD1050-000S3
|
订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| FPD1050-000SQ |
25 EA |
25 EA |
Standard 25 Piece Waffle Pack Shipping From Newton Aycliffe |
1+ |
$18.16 |
| FPD1050-000 |
100 EA |
100 EA |
Standard 100 Piece Waffle Pack Shipping From Newton Aycliffe |
100+ |
$12.69 |
| |
|
|
|
750+ |
$8.84 |
