FPD1500 1W Power pHEMT
The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) featuring a 0.25μmx1500μm Schottky barrier gate defined by high resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD1500 is also available
in the low-cost plastic SOT89 and DFN packages.
技术特性 Features
- 29dBm Linear Output Power at 12GHz
- 9dB Power Gain at 12GHz
- 12.5dB Max Stable Gain at 12GHz
- 41dBm OIP3
- 35% Power-Added Efficiency
应用领域 Applications
- Narrowband and Broadband
High-Performance Amplifiers
- SATCOM Uplink Transmitters
- PCS/Cellular Low-Voltage
High-Efficiency Output Amplifiers
- Medium-Haul Digital Radio
Transmitters
|
技术指标
| Frequency Range (Min) (MHz): |
1000 |
| Frequency Range (Max) (MHz): |
18000 |
| Gain (dB): |
8.5 |
| OP1dB (dBm): |
29 |
| OIP3 (dBm): |
41 |
| VSUPPLY (V): |
8 |
| ISUPPLY (mA): |
185 |
| Package: |
Die |
订购信息 Ordering Information
- Full Pack (100) FPD1500-000
- Small Quantity (25) FPD1500-000SQ
- Sample Quantity (3) FPD1500-000S3
|
订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| FPD1500-000SQ |
25 EA |
25 EA |
Standard 25 Piece Waffle Pack Shipping From Newton Aycliffe |
1+ |
$19.53 |
| FPD1500-000 |
100 EA |
100 EA |
Standard 100 Piece Waffle Pack Shipping From Newton Aycliffe |
100+ |
$13.65 |
| |
|
|
|
750+ |
$9.50 |
