FPD3000 2W Power pHEMT
The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) featuring a 0.25μmx3000μm Schottky barrier gate defined by high - resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD3000 is also available in the low-cost plastic SOT89 package.
技术特性 Features
- 32.5dBm Linear Output Power at 12GHz
- 6.5dB Power Gain at 12GHz
- 8dB Max Stable Gain at 12GHz
- 42dBm OIP3
- 30% Power-Added Efficiency
应用领域 Applications
- Narrowband and Broadband High-Performance Amplifiers
- SATCOM Uplink Transmitters
- PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers
- Medium-Haul Digital Radio Transmitters
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技术指标
| Frequency Range (Min) (MHz): |
1000 |
| Frequency Range (Max) (MHz): |
15000 |
| Gain (dB): |
6.5 |
| OP1dB (dBm): |
32.5 |
| OIP3 (dBm): |
42 |
| VSUPPLY (V): |
8 |
| ISUPPLY (mA): |
400 |
| Package: |
Die |
订购信息 Ordering Information
- Full Pack (100) FPD3000-000
- Small Quantity (25) FPD3000-000SQ
- Sample Quantity (3) FPD3000-000S3
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订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| FPD3000-000SQ |
25 EA |
25 EA |
Standard 25 Piece Waffle Pack Shipping From Newton Aycliffe |
1+ |
$36.53 |
| FPD3000-000 |
100 EA |
100 EA |
Standard 100 Piece Waffle Pack Shipping From Newton Aycliffe |
100+ |
$25.53 |
| |
|
|
|
750+ |
$17.76 |
